DocumentCode
1074056
Title
GaAs IGFET digital integrated circuits
Author
Schuermeyer, Fritz L.
Author_Institution
Avionics Laboratory, Wright-Patterson Air Force Base, OH
Volume
28
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
541
Lastpage
545
Abstract
A technique to utilize GaAs insulated gate field effect transistors (IGFEI´s) with large surface state densities in digital integrated circuits is described. In this technique, the threshold voltage is electrically set to obtain enhancement-mode characteristics of the IGFET´s. Due to change in surface charge with time, these circuits will not function at very low frequencies. Several advantages of this IGFET technology over other enhancement-mode GaAs technologies are presented.
Keywords
Digital integrated circuits; Gallium arsenide; Hysteresis; Insulation; Interface states; Latches; MESFETs; Metal-insulator structures; Ring oscillators; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20379
Filename
1481531
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