GaAs IGFET digital integrated circuits

A technique to utilize GaAs insulated gate field effect transistors (IGFEI´s) with large surface state densities in digital integrated circuits is described. In this technique, the threshold voltage is electrically set to obtain enhancement-mode characteristics of the IGFET´s. Due to change in surface charge with time, these circuits will not function at very low frequencies. Several advantages of this IGFET technology over other enhancement-mode GaAs technologies are presented.