Charge transfer in a p-surface channel CCD as a function of bias charge

Measurements of charge transfer loss in a p-surface channel CCD have been obtained as a function of bias charge. The experimental data satisfy the relationship: transfer loss proportional to log (1/bias charge) for values of bias charge less than 0.1 percent of the full well signal. Analysis of these data yields an interface state density of 1.0 × 10¹⁰states/cm². eV in good agreement with values obtained by other techniques.