Title :
Enhancement of breakdown voltages of Schottky diodes with a tapered window
Author_Institution :
The Korea Advanced Institute of Science, Seoul, Korea
fDate :
5/1/1981 12:00:00 AM
Abstract :
Aluminum-silicon Schottky diodes with a tapered window have been fabricated using graded etching of SiO2. The breakdown voltages have been drastically increased to 130 V in comparison with 30 V for unguarded Schottky diodes.
Keywords :
Artificial intelligence; Electric breakdown; Electrons; Etching; Leakage current; Low voltage; P-n junctions; Schottky diodes; Silicon; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20392
