DocumentCode :
1074242
Title :
Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source
Author :
Nissim, Y.I. ; Gibbons, J.F. ; Gold, R.B.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
Volume :
28
Issue :
5
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
607
Lastpage :
609
Abstract :
Nonalloyed ohmic contacts were formed on diffused n+layers in GaAs. These layers were obtained in semi-insulating substrates by a combination of themal and CW laser-assisted diffustion and activation of tin from a spin-on SnO2/SiO2film. These contacts display low specific contact resistance (≲ 1 × 10-6Ω cm2) and good thermal stability (up to 400°C).
Keywords :
Doping profiles; Electrons; Gallium arsenide; Ohmic contacts; Piecewise linear techniques; Poisson equations; Predictive models; Semiconductor process modeling; Solid state circuits; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20396
Filename :
1481548
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1074242
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