• DocumentCode
    1074242
  • Title

    Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source

  • Author

    Nissim, Y.I. ; Gibbons, J.F. ; Gold, R.B.

  • Author_Institution
    Stanford Electronics Laboratories, Stanford, CA
  • Volume
    28
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    607
  • Lastpage
    609
  • Abstract
    Nonalloyed ohmic contacts were formed on diffused n+layers in GaAs. These layers were obtained in semi-insulating substrates by a combination of themal and CW laser-assisted diffustion and activation of tin from a spin-on SnO2/SiO2film. These contacts display low specific contact resistance (≲ 1 × 10-6Ω cm2) and good thermal stability (up to 400°C).
  • Keywords
    Doping profiles; Electrons; Gallium arsenide; Ohmic contacts; Piecewise linear techniques; Poisson equations; Predictive models; Semiconductor process modeling; Solid state circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20396
  • Filename
    1481548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1074242