Title :
TJS laser with buried p-region for high temperature CW operation
Author :
Oomura, Etsuji ; Hirano, Ryoichi ; Tanaka, Toshio ; Ishii, Makoto ; Susaki, Wataru
Author_Institution :
Semiconductor Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fDate :
7/1/1978 12:00:00 AM
Abstract :
A transverse-junction-stripe (TJS) laser with a buried p-region in a substrate has been newly developed. The temperature dependence of the threshold current is much improved so that it can operate continuously up to 110°C. Even when mounted upside up it can show a CW operation at a temperature as high as 80°C.
Keywords :
Charge carrier density; Geometrical optics; Laser modes; Optical device fabrication; P-n junctions; Semiconductor diodes; Substrates; Temperature dependence; Threshold current; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1978.1069833
