Ion-implanted PLZT ceramics: A new high-sensitivity image storage medium

Studies of photoferroelectric (PFE) image storage in H, He, Ar, and more recently, Ar + Ne implanted PLZT reveal that the photosensitivity can be significantly increased by ion implantation into the image storage surface. For example, the photosensitivity after coimplantation of Ar + Ne is increased by about four orders of magnitude over that of unimplanted PLZT. The increase in photosensitivity is controlled by implantation-produced disorder which results in marked decreases in dark conductivity and dielectric constant and changes in the effective photoconductivity of the implanted layer. In this paper the effects of Ar and Ar + Ne implantation ate presented along with a phenomenological model which describes the photosensitivity enhancement obtained by ion implantation.