• DocumentCode
    1074616
  • Title

    Adhesion release and yield enhancement of microstructures using pulsed Lorentz forces

  • Author

    Gogoi, Bishnu P. ; Mastrangelo, Carlos H.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    4
  • Issue
    4
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    185
  • Lastpage
    192
  • Abstract
    Adhesion of microstructures is an important failure mechanism in surface-micromachined devices. In this paper, a simple and effective method for releasing pinned microstructures is presented. The method uses the Lorentz force due to the interaction of a current with an external magnetic field to generate an upward force that frees the microstructures. The static and transient behavior of beams under the Lorentz force is examined. Critical values of current and pulse durations needed to release the microstructures are determined and verified with experimental data. Using this technique, previously pinned beams and rectangular plates have been released. The release technique is suitable for mass production environments since it is easily applied during the electrical testing of the device, thereby increasing the manufacturing yield
  • Keywords
    circuit optimisation; elemental semiconductors; failure analysis; integrated circuit yield; micromachining; microsensors; semiconductor device testing; silicon; transient analysis; Si; adhesion release; electrical testing; external magnetic field; failure mechanism; manufacturing yield; mass production environments; microsensors; pinned microstructure release; pulse durations; pulsed Lorentz forces; rectangular plates; static behavior; surface-micromachined devices; transient behavior; yield enhancement; Adhesives; Fabrication; Failure analysis; Lorentz covariance; Magnetic fields; Manufacturing; Mass production; Microstructure; Testing; Wire;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.475545
  • Filename
    475545