DocumentCode
1074629
Title
"Bipolar-mode" transistors on a voltage-controlled scheme
Author
Tamama, Teruo ; Sakaue, Masahiro ; Mizushima, Yoshihiko
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
28
Issue
7
fYear
1981
fDate
7/1/1981 12:00:00 AM
Firstpage
777
Lastpage
783
Abstract
A buried-gate vertical JFET (BVFET) operated under forward gate bias shows saturating or nonsaturating drain current characteristics simply by Changing the channel cross section area. BVFET with a proper channel cross section has similar characteristics to a "bipolar-mode" SIT (BSIT) or a depleted base transistor (DBT). A generalized picture is derived relating these forward-biased JFET\´s to the conventional bipolar transistor (BPT). Analysis of BVFET has proved that the operation of BSIT is completely the same as that of BPT with its base voltage controlled. The current saturation mechanism is discussed in detail in this paper.
Keywords
Analytical models; Bipolar transistors; Capacitance; Conductivity; Dielectric constant; Electron mobility; Impurities; Telegraphy; Telephony; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20430
Filename
1481582
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