DocumentCode :
1074690
Title :
Counter doping into uniformly and heavily doped channel region of sub-0.1 μm SOI MOSFETs
Author :
Suzuki, K. ; Satoh, A. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
17
Issue :
1
fYear :
1996
Firstpage :
1
Lastpage :
3
Abstract :
We proposed counter doping into a heavily and uniformly doped channel region of SOI MOSFETs. This enabled us to suppress the short channel effects with proper threshold voltage V/sub th/ and to eliminate parasitic edge or back gate transistors. We derived a model for V/sub th/ as a function of the projected range, Rp and dose, /spl Phi//sub D/, of the counter doping, and showed that V/sub th/ is invariable even when the as-implanted counter doping profile redistributes. Using this technology, we demonstrated a V/sub th/ roll-off free 0.075 μm-L/sub Geff/ nMOSFET with low off-state current.
Keywords :
MOSFET; doping profiles; heavily doped semiconductors; semiconductor device models; semiconductor doping; silicon-on-insulator; 0.075 micron; SOI MOSFETs; back gate transistors; counter doping; heavily doped channel region; off-state current; parasitic edge transistors; projected range; short channel effects; threshold voltage; uniformly doped channel region; Capacitance; Counting circuits; Doping profiles; Ion implantation; MOSFET circuits; Neodymium; Power MOSFET; Semiconductor process modeling; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.475558
Filename :
475558
Link To Document :
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