DocumentCode :
1074692
Title :
Avalanche response time in GaAs as determined from microwave admittance measurements
Author :
Adlerstein, Michael G. ; McClymonds, James W. ; Statz, Hermann
Author_Institution :
Raytheon Company, Waltham, MA
Volume :
28
Issue :
7
fYear :
1981
fDate :
7/1/1981 12:00:00 AM
Firstpage :
808
Lastpage :
811
Abstract :
Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by the classical expression for intrinsic avalanche time 
. This is at variance with the prediction that τi in GaAs may be anomalously long.
. This is at variance with the prediction that τKeywords :
Admittance measurement; Avalanche breakdown; Data analysis; Delay; Diodes; Equations; Gallium arsenide; Radio frequency; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20435
Filename :
1481587
Link To Document :
