• DocumentCode
    1074692
  • Title

    Avalanche response time in GaAs as determined from microwave admittance measurements

  • Author

    Adlerstein, Michael G. ; McClymonds, James W. ; Statz, Hermann

  • Author_Institution
    Raytheon Company, Waltham, MA
  • Volume
    28
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    808
  • Lastpage
    811
  • Abstract
    Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by the classical expression for intrinsic avalanche time \\tau _{i} = l_{a}/3v_{S} . This is at variance with the prediction that τiin GaAs may be anomalously long.
  • Keywords
    Admittance measurement; Avalanche breakdown; Data analysis; Delay; Diodes; Equations; Gallium arsenide; Radio frequency; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20435
  • Filename
    1481587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1074692