Title :
High-temperature microwave characteristics of GaAs MESFET devices with AlAs buffer layers
Author :
Ito, Chris ; Jenkins, Tom ; Trombley, Gerald ; Lee, Rainier ; Reston, Rocky ; Havasy, C. ; Johnson, Belinda ; Eppers, Chris
Author_Institution :
Northeastern Consortium for Eng. Educ., Port Royal, VA, USA
Abstract :
AlAs buffers used to reduce the leakage current of high-temperature GaAs MESFET devices are shown to have no detrimental effect on the microwave performance measured to 200/spl deg/C. The f/sub t/ values decrease with increasing temperature, but do not appear to be influenced by the AlAs buffer. The f/sub max/ values also decrease with increasing temperature; however, they are improved with increasing AlAs buffer thickness due to a concomitant decrease in the device output conductance, At 200/spl deg/C ambient temperature, f/sub t/ and f/sub max/ values of 14.5 GHz and 36.7 GHz, respectively, were measured.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high-temperature techniques; microwave field effect transistors; 14.5 GHz; 200 C; 36.7 GHz; AlAs; AlAs buffer layers; GaAs; GaAs MESFET devices; high-temperature microwave characteristics; leakage current; Buffer layers; Degradation; Gallium arsenide; Indium tin oxide; Leakage current; MESFETs; Microwave devices; Molecular beam epitaxial growth; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
