High-temperature microwave characteristics of GaAs MESFET devices with AlAs buffer layers

Author

Ito, Chris ; Jenkins, Tom ; Trombley, Gerald ; Lee, Rainier ; Reston, Rocky ; Havasy, C. ; Johnson, Belinda ; Eppers, Chris

Author_Institution

Northeastern Consortium for Eng. Educ., Port Royal, VA, USA

Volume

17

Issue

1

fYear

1996

Firstpage

16

Lastpage

18

Abstract

AlAs buffers used to reduce the leakage current of high-temperature GaAs MESFET devices are shown to have no detrimental effect on the microwave performance measured to 200/spl deg/C. The f/sub t/ values decrease with increasing temperature, but do not appear to be influenced by the AlAs buffer. The f/sub max/ values also decrease with increasing temperature; however, they are improved with increasing AlAs buffer thickness due to a concomitant decrease in the device output conductance, At 200/spl deg/C ambient temperature, f/sub t/ and f/sub max/ values of 14.5 GHz and 36.7 GHz, respectively, were measured.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high-temperature techniques; microwave field effect transistors; 14.5 GHz; 200 C; 36.7 GHz; AlAs; AlAs buffer layers; GaAs; GaAs MESFET devices; high-temperature microwave characteristics; leakage current; Buffer layers; Degradation; Gallium arsenide; Indium tin oxide; Leakage current; MESFETs; Microwave devices; Molecular beam epitaxial growth; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.475563

Filename

475563