DocumentCode :
1074771
Title :
Comparison of light triggered and electrically triggered thyristor turn-on
Author :
Temple, V. K A
Author_Institution :
Corporate Research and Development Center, Schenectady, NY
Volume :
28
Issue :
7
fYear :
1981
fDate :
7/1/1981 12:00:00 AM
Firstpage :
860
Lastpage :
865
Abstract :
As part of an EPRI (Electric Power Research Institute) funded research program on a directly light triggered (LT) thyristor for HV dc application, an existing 53-mm 2600-V 1000-A electrically fired device was suitably modified to be turned on with an incident photo-pulse of 20 nJ, the basic problem being the retention of a 2000 V/µs dV/dt capability. The price paid for high sensitivity and high dV/dt capability was found to be a device inherently more susceptible to dV/dt failure. In the efforts to cope with this problem a number of computer-type models were developed to assist in predicting turn-on in both electrically and light fired devices with one or more amplifying stages. At the same time, devices were fabricated which could be either light or electrically fired. Both the model and experiment point to faster turn-on of the light fired device and an increased requirement for careful design.
Keywords :
Amorphous materials; Analog memory; Electron devices; Electron optics; Network address translation; Nonvolatile memory; Notice of Violation; Optical sensors; Semiconductor memory; Thyristors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20443
Filename :
1481595
Link To Document :
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