DocumentCode :
1074774
Title :
The dual gate emitter switched thyristor (DG-EST)
Author :
Sridhar, S. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume :
17
Issue :
1
fYear :
1996
Firstpage :
25
Lastpage :
27
Abstract :
A new device structure, called the dual gate emitter switched thyristor (DG-EST), is introduced for simultaneously obtaining on-state voltage drops lower than that of the conventional emitter switched thyristor (C-EST) and the high-voltage current saturation features of the Dual Channel EST (DC-EST). The DG-EST contains a DC-EST section and a C-EST section with a common thyristor section that can be controlled using two independent gate electrodes. When a positive bias is applied to both the gates, the device operates in a thyristor mode with the thyristor current constrained to flow through two lateral MOSFETs which minimizes the on-state voltage drop. When a "zero" bias is applied to the gate of the conventional EST, the device exhibits high-voltage current saturation, with the bias on the gate of the DC-EST controlling the saturated current. In this paper, the results of measurements performed on devices fabricated with a six-mask IGBT-like process are reported.
Keywords :
MOS-controlled thyristors; power semiconductor switches; HV current saturation features; MOS-gated structure; dual gate emitter switched thyristor; on-state voltage drops; Anodes; Current density; Electrodes; Insulated gate bipolar transistors; MOSFET circuits; Performance evaluation; Protection; Thyristors; Voltage control;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.475566
Filename :
475566
Link To Document :
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