Submicron gate MOSFET´s with channel-doped separate gate structures (SG-MOSFET´s)

Submicron gate MOSFET´s with a new device structure are presented. The device features gate separation between the source and gate and between the gate and drain. The minimum gate length limited by VTHlowering is extended into the submicron range. Experimental results showed pentode-like current-voltage characteristics without punchthtough, even in the submicron range. Experimental results of inverter circuits and theoretical analysis predict high-speed operation in the subnanosecond region.