DocumentCode :
1074884
Title :
InGaAsP/InP photodiodes: Microplasma-limited avalanche multiplication at 1-1.3-µm wavelength
Author :
Lee, Tien P. ; Burrus, Charles A., Jr. ; Dentai, Andrew G.
Author_Institution :
Bell Telephone Laboratories, Inc., Holmdel, NJ, USA
Volume :
15
Issue :
1
fYear :
1979
fDate :
1/1/1979 12:00:00 AM
Firstpage :
30
Lastpage :
35
Abstract :
Photodiodes for use in the 
m wavelength region have been fabricated from double-heterostructure InGaAsP/InP wafers grown by liquid-phase epitaxy (LPE). The measured avalanche multiplication in mesa-configuration devices was limited to values of 10 or less. The results of careful measurement of the photoresponse, quantum efficiency, and reverse-bias 
characteristics suggest that the gain is limited by microplasma breakdown. The density of microplasmas was estimated to be about 106cm-2, approximately equal to the etch pit density of the InP substrates used in growth of the epitaxial layers.
m wavelength region have been fabricated from double-heterostructure InGaAsP/InP wafers grown by liquid-phase epitaxy (LPE). The measured avalanche multiplication in mesa-configuration devices was limited to values of 10 or less. The results of careful measurement of the photoresponse, quantum efficiency, and reverse-bias characteristics suggest that the gain is limited by microplasma breakdown. The density of microplasmas was estimated to be about 106cm-2, approximately equal to the etch pit density of the InP substrates used in growth of the epitaxial layers.Keywords :
Avalanche photodiodes; Gallium materials/devices; Infrared detectors; Semiconductor plasmas; Semiconductor radiation detectors; Alloying; Epitaxial growth; Etching; Fabrication; Indium phosphide; Lattices; P-n junctions; Photodiodes; Substrates; Wavelength measurement;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1069879
Filename :
1069879
Link To Document :
