DocumentCode :
1074890
Title :
Surface Chargine of Dielectrics by Secondary Emission and the Determination of Emission Yield
Author :
Gross, B. ; Seggern, H.V. ; Berraissoul, A.
Author_Institution :
Institute for Electroacoustics, Technical University of Darmstadt, Darmstadt, Germany
Issue :
1
fYear :
1987
Firstpage :
23
Lastpage :
28
Abstract :
A new method for the determination of the secondary emission yield of dielectrics is discussed. Results are given for Teflon® , Aclar, Kapton® , and Mylar® . Surfaces of dielectrics irradiated with electrons of energies above 2 keV become negatively charged. For lower energies the number of backscattered primaries plus backward emitted secondaries eventually exceeds that of the incoming primaries. Then the surface can be positively charged. It was recognized that this effect might lead to a simple method for the determination of the total backscatter plus secondary emission yield. This effect is used to determine the total emission yield curve in one run with a single beam energy.
Keywords :
Backscatter; Capacitance; Current measurement; Dielectrics; Electrodes; Electron beams; Fluorescence; Manufacturing; Permittivity; Voltage;
fLanguage :
English
Journal_Title :
Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9367
Type :
jour
DOI :
10.1109/TEI.1987.298959
Filename :
4081348
Link To Document :
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