DocumentCode
1074929
Title
Mesostructure electronics
Author
Price, Peter J.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
28
Issue
8
fYear
1981
fDate
8/1/1981 12:00:00 AM
Firstpage
911
Lastpage
914
Abstract
Control of composition during the growth of compound semiconductors, especially by molecular beam epitaxy (MBE), makes possible the fabrication of heterostructures with composition varying on a space scale of order ten to one hundred lattice constants. These have distinctive physical properties with possibilities of device applications. This paper considers some structures consisting of parallel layers, and discusses eleclctronic phenomena involving conduction parallel to the layers and polarization normal to them.
Keywords
Atomic layer deposition; Charge carrier processes; Electrons; Fabrication; Gallium arsenide; Helium; Lattices; Molecular beam epitaxial growth; Optical polarization; Physics;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20458
Filename
1481610
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