DocumentCode
1074945
Title
Subthreshold kinks in fully depleted SOI MOSFET´s
Author
Fossum, J.G. ; Krishnan, S. ; Faynot, O. ; Cristoloveanu, V. ; Raynaud, C.
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume
16
Issue
12
fYear
1995
Firstpage
542
Lastpage
544
Abstract
Measured current-voltage characteristics of scaled, floating-body, fully depleted (FD) SOI MOSFET´s that show subthreshold kinks controlled by the back-gate (substrate) bias are presented. The underlying physical mechanism is described, and is distinguished from the well known kink effect in partially depleted devices. The physical insight attained qualifies the meaning of FD/SOI and implies new design issues for low-voltage FD/SOI CMOS.
Keywords
MOSFET; silicon-on-insulator; current-voltage characteristics; floating body; fully depleted SOI MOSFETs; low-voltage FD/SOI CMOS; substrate bias; subthreshold kinks; Bipolar transistors; Breakdown voltage; Current measurement; Current-voltage characteristics; Electric breakdown; Electrons; FETs; MOSFET circuits; Solids; Virtual manufacturing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.475581
Filename
475581
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