Title :
Subthreshold kinks in fully depleted SOI MOSFET´s
Author :
Fossum, J.G. ; Krishnan, S. ; Faynot, O. ; Cristoloveanu, V. ; Raynaud, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Measured current-voltage characteristics of scaled, floating-body, fully depleted (FD) SOI MOSFET´s that show subthreshold kinks controlled by the back-gate (substrate) bias are presented. The underlying physical mechanism is described, and is distinguished from the well known kink effect in partially depleted devices. The physical insight attained qualifies the meaning of FD/SOI and implies new design issues for low-voltage FD/SOI CMOS.
Keywords :
MOSFET; silicon-on-insulator; current-voltage characteristics; floating body; fully depleted SOI MOSFETs; low-voltage FD/SOI CMOS; substrate bias; subthreshold kinks; Bipolar transistors; Breakdown voltage; Current measurement; Current-voltage characteristics; Electric breakdown; Electrons; FETs; MOSFET circuits; Solids; Virtual manufacturing;
Journal_Title :
Electron Device Letters, IEEE
