Title :
Resonant interband tunneling FET
Author :
Tehrani, S. ; Shen, J. ; Goronkin, H. ; Kramer, G. ; Tsui, R. ; Zhu, T.X.
Author_Institution :
Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
A lateral three-terminal Resonant Interband Tunneling Field Effect Transistor (RITFET) has been fabricated. It consists of a resonant interband tunnel diode (RITD) built using the GaSb-AlSb-InAs material system and a pseudomorphic InGaAs channel FET in which the current is controlled by a Schottky gate. The three terminal device has current-voltage characteristics that exhibit negative differential conductance with a peak-to-valley current ratio of 8 at room temperature.
Keywords :
Schottky gate field effect transistors; negative resistance devices; resonant tunnelling transistors; GaSb-AlSb-InAs; InGaAs; NDR; Schottky gate; current-voltage characteristics; lateral three-terminal RITFET; negative differential conductance; pseudomorphic InGaAs channel FET; resonant interband tunnel diode; resonant interband tunneling FET; CMOS technology; Etching; FETs; Fabrication; Gallium arsenide; Indium gallium arsenide; Research and development; Resonance; Resonant tunneling devices; Schottky diodes;
Journal_Title :
Electron Device Letters, IEEE
