A low phase noise silicon 18-GHz push-push VCO

Author

Dussopt, Laurent ; Rebeiz, Gabriel M.

Author_Institution

Radiat. Lab., Univ. of Michigan, Ann Arbor, MI, USA

Volume

13

Issue

1

fYear

2003

Firstpage

4

Lastpage

6

Abstract

The design and measurement of a push-push voltage controlled oscillator (VCO) at 18.66-18.3 GHz are presented in this paper. The circuit includes two packaged silicon transistors (Siemens BFP 540F) and a microstrip resonator tuned by two GaAs varactor diodes (M/A-COM ML46580). A 360-MHz tuning range is obtained with an output power of 0-3.1 dBm. The fundamental rejection is around 17 dB for a wide range of collector bias current. The phase noise is below -103 dBc/Hz at 100-kHz offset and below -122 dBc/Hz at 1 MHz for the entire tuning bandwidth.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MMIC; circuit tuning; elemental semiconductors; gallium arsenide; integrated circuit noise; microstrip resonators; phase noise; silicon; varactors; voltage-controlled oscillators; 18.66 to 18.3 GHz; Si; Siemens BFP 540F; bipolar transistors; collector bias current; fundamental rejection; microstrip resonator; output power; phase noise; push-push VCO; tuning bandwidth; varactor diodes; voltage controlled oscillator; Diodes; Gallium arsenide; Microstrip resonators; Packaging; Phase noise; Silicon; Tuned circuits; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2002.807699

Filename

1161566