Title :
High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs
Author :
Shealy, J.B. ; Liu, T.Y. ; Thompson, M.A. ; Wilson, R.G. ; Nguyen, L.D. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
High threshold voltage uniformity p/sup +/-GaInAs/n-AlInAs/GaInAs millimeter-wave junction-modulated HEMT´s are reported. Devices with 0.2 μm gatelength exhibit a standard deviation in threshold voltage of 13.7 mV across a 1×1.5 in2 wafer. The uniformity is achieved in devices which exhibit high DC transconductance (520 mS/mm), high unity-gain cut-off frequencies: fT (105 GHz) and fmax (exceeding 200 GHz), and low minimum noise figure (0.45 dB) with high associated gain (14.5 dB) at 12 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device noise; 0.2 micron; 0.45 dB; 12 to 200 GHz; 13.7 mV; 14.5 dB; 520 mS/mm; EHF; GaInAs-AlInAs-GaInAs; MM-wave transistor; junction-modulated HEMT; low-noise performance; millimeter-wave HEMT; threshold voltage uniformity; Cutoff frequency; Doping; Etching; Fabrication; Gold; HEMTs; Millimeter wave technology; Noise figure; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
