DocumentCode :
1075024
Title :
The reliability of a practical Ga1-x Alx As laser device
Author :
Thompson, Alan
Author_Institution :
Hewlett-Packard Research Laboratories, Palo Alto, CA, USA
Volume :
15
Issue :
1
fYear :
1979
fDate :
1/1/1979 12:00:00 AM
Firstpage :
11
Lastpage :
13
Abstract :
A GaAlAs DH-laser hybrid device is described that compensates for temperature variations and laser degradation. Lifetesting in a 55°C ambient for over a year yields a projected room-temperature median lifetime of 
h. Lasers having no aluminum in the active layer have a median lifetime 70 times smaller.
h. Lasers having no aluminum in the active layer have a median lifetime 70 times smaller.Keywords :
Gallium materials/lasers; Semiconductor device reliability; Circuits; Degradation; Diode lasers; Instruments; Laser feedback; Laser modes; Mirrors; Photodiodes; Semiconductor lasers; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1069890
Filename :
1069890
Link To Document :
