Title :
Structural effect on band-trap-band tunneling induced drain leakage in n-MOSFET´s
Author :
Wang, Tahui ; Chang, T.E. ; Huang, C.M. ; Yang, J.Y. ; Chang, K.M. ; Chiang, L.P.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and characterized in conventional S/D, DDD, and LDD n-MOSFET structures. The results shows that lateral field enhanced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures while vertical field induced tunneling is dominant in conventional S/D and DDD structures.
Keywords :
MOSFET; hot carriers; leakage currents; semiconductor device models; tunnelling; DDD structures; LDD structures; NMOSFET; S/D structures; band-trap-band tunneling; drain leakage current; hot carrier stress; lateral field enhanced tunneling; model; n-MOSFET structures; structural dependence; vertical field induced tunneling; Charge carrier processes; Councils; Electron emission; Electron traps; Hot carriers; Leakage current; MOSFET circuits; Rain; Thermal stresses; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
