Title :
Threshold voltage characteristics of depletion-mode MOSFET´s
Author :
Wordeman, Matthew R. ; Dennard, Robert H.
Author_Institution :
T. J. Watson Research Center, IBM Corporation, Yorktown Heights, NY
fDate :
9/1/1981 12:00:00 AM
Abstract :
This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined.
Keywords :
Degradation; Doping; FETs; Impurities; Intrusion detection; Inverters; Logic circuits; MOSFET circuits; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20479
