• DocumentCode
    1075133
  • Title

    Threshold voltage characteristics of depletion-mode MOSFET´s

  • Author

    Wordeman, Matthew R. ; Dennard, Robert H.

  • Author_Institution
    T. J. Watson Research Center, IBM Corporation, Yorktown Heights, NY
  • Volume
    28
  • Issue
    9
  • fYear
    1981
  • fDate
    9/1/1981 12:00:00 AM
  • Firstpage
    1025
  • Lastpage
    1030
  • Abstract
    This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined.
  • Keywords
    Degradation; Doping; FETs; Impurities; Intrusion detection; Inverters; Logic circuits; MOSFET circuits; Silicon; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20479
  • Filename
    1481631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075133