Low noise ion-implanted InP FET´s

Ion-implanted one micron gate length InP FET´s are described with noise figures as low as 3.5 dB at 12 GHz. This is the lowest published noise figure for InP FET´s. The InP FET microwave performance data are compared with those of equivalent geometry GaAs FET´s with either ion implanted or epitaxial channels. Microwave results indicate a definite gain advantage of InP FET´s over these GaAs counterparts. Noise figures of both types of FET´s are comparable but InP substrate improvement and implant profile optimization are suggested as a means of further reduction of the noise figure of InP FET´s.