An improvement of the interface properties of plasma anodized SiO2/Si system for the fabrication of MOSFET´s

A new annealing process in chlorine ambient produced by passing argon through a CCl4container for reducing the interface states of the plasma anodized SiO2/Si system was developed. At optimum annealing conditions, the interface state density was reduced to about 1010states/eV . cm². Application of the oxide to the fabrication of MOSFET´s shows that the devices obtained have lower threshold voltage and higher mobility than those fabricated with thermal oxidation in dry oxygen.