DocumentCode :
1075278
Title :
Charge hysteresis measurements of MOS structures
Author :
Kaplan, G.
Author_Institution :
The University of New South Wales, Kensington, N.S.W., Australia
Volume :
28
Issue :
9
fYear :
1981
fDate :
9/1/1981 12:00:00 AM
Firstpage :
1103
Lastpage :
1105
Abstract :
A method for charge hysteresis investigation in MOS structures is presented, which is based on direct charge measurement using constant current source and time readout.
Keywords :
Charge measurement; Circuit simulation; Current measurement; Electrodes; Electron devices; Hysteresis; Implants; Solid state circuits; Threshold voltage; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20495
Filename :
1481647
Link To Document :
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