Title :
Charge hysteresis measurements of MOS structures
Author_Institution :
The University of New South Wales, Kensington, N.S.W., Australia
fDate :
9/1/1981 12:00:00 AM
Abstract :
A method for charge hysteresis investigation in MOS structures is presented, which is based on direct charge measurement using constant current source and time readout.
Keywords :
Charge measurement; Circuit simulation; Current measurement; Electrodes; Electron devices; Hysteresis; Implants; Solid state circuits; Threshold voltage; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20495
