A BIST Scheme With the Ability of Diagnostic Data Compression for RAMs

Author

Chih-Sheng Hou ; Jin-Fu Li ; Ting-Jun Fu

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Zhongli, Taiwan

Volume

33

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

2020

Lastpage

2024

Abstract

This paper proposes a built-in self-test (BIST) scheme with syndrome-compression ability for random access memories (RAMs) with static (SF) and dynamic faults (DFs). A March-element-based (MEB) compression scheme is proposed to reduce the volume of diagnostic data. The MEB compression scheme can efficiently compress the diagnostic data of a RAM tested by a March test for detecting SFs and DFs. Simulation results show that the compression ratio (the ratio of the number bits of the compressed diagnostic data to that of the original diagnostic data) is about 50.79% for an 8K×16-bit memory. The area overhead of the BIST with the MEB compressor is about 2.73% for an 8K×16-bit RAM using TSMC 0.18 um cell library.

Keywords

built-in self test; data compression; fault diagnosis; integrated circuit testing; random-access storage; BIST scheme; MEB compressor; March-element-based compression scheme; RAMs; TSMC cell library; area overhead; built-in self-test scheme; diagnostic data compression; diagnostic data volume reduction; dynamic faults; random access memories; size 0.18 mum; static faults; syndrome-compression ability; Built-in self-test; Circuit faults; Data compression; Random access memory; Built-in self-test (BIST); March test; Random access memory; built-in self-test; compression; diagnosis; random access memory (RAM);

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2014.2363393

Filename

6923433