A GaAs power amplifier for 3.3 V CDMA/AMPS dual-mode cellular phones

Author

Maeng, Sung-Jae ; Chun, Soung-Soon ; Lee, Jong-Lam ; Lee, Chang-Seok ; Youn, Kwang-Jun ; Park, Hyung-Moo

Author_Institution

Semicond Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

43

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2839

Lastpage

2844

Abstract

For CDMA/AMPS dual-mode cellular phones, a power amplifier operating at 3.3 V has been developed for the first time. It consists of linear GaAs power MESFET´s and an output matching circuit which reduces the second and the third harmonics. The amplifier shows an output power of 31.5 dBm and a power-added efficiency of 61% for the AMPS mode. The third-order intermodulation distortion and the fifth-order one are measured to be -32 dBc and -45 dBc at an output power of 26 dBm for the CDMA mode

Keywords

III-V semiconductors; UHF power amplifiers; cellular radio; code division multiple access; gallium arsenide; impedance matching; intermodulation distortion; land mobile radio; power amplifiers; 18 GHz; 3.3 V; 61 percent; 836.5 MHz; AMPS mode; CDMA mode; CDMA/AMPS dual-mode cellular phones; GaAs; GaAs power amplifier; cutoff frequency; fifth-order intermodulation distortion; linear GaAs power MESFET; output matching circuit; output power; power-added efficiency; second harmonic reduction; third harmonic reduction; third-order intermodulation distortion; Cellular phones; Distortion measurement; Gallium arsenide; Impedance matching; Intermodulation distortion; MESFET circuits; Multiaccess communication; Power amplifiers; Power generation; Power system harmonics;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.475643

Filename

475643