An accurate design method of bipolar devices using a two-dimensional device simulator

Author

Tomizawa, Masaaki ; Kitazawa, Hitoshi ; Yoshii, Akira ; Horiguchi, Shoji ; Sudo, Tsuneta

Author_Institution

Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan

Volume

28

Issue

10

fYear

1981

fDate

10/1/1981 12:00:00 AM

Firstpage

1148

Lastpage

1153

Abstract

The systematic application of two-dimensional analysis for the bipolar device design is described. In this analysis, surface recombination is taken into account by properly modifying the carrier lifetime term, in addition to mobility variations and bandgap narrowing effects. Moreover, an effective method to obtain terminal currents from the calculated current densities is introduced. The analysis of transistors with different emitter length demonstrates the validity of this procedure. The propagation delay time of IIL also is calculated using $V-I$ characteristics and capacitances obtained by this two-dimensional analysis. The results give good agreement with experimental ones. IIL and SFL with subnanosecond gate delay time are designed with the suitable geometry and doping profiles by the two-dimensional analysis.

Keywords

Capacitance-voltage characteristics; Current density; Delay; Design methodology; Differential equations; Doping profiles; Finite element methods; Geometry; Impurities; Radiative recombination;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1981.20502

Filename

1481654