DocumentCode :
1075395
Title :
An experimental study of the BO-MOS dynamic RAM cell
Author :
Sakurai, Junji
Author_Institution :
Fujitsu Limited, Kawasaki, Japan
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1178
Lastpage :
1182
Abstract :
A novel structure of a one-transistor dynamic MOS RAM cell is developed for higher integration. The buried-oxide MOS (BO-MOS) RAM cell consists of a planar MOSFET transfer gate and a storage capacitor of buried N+diffusion. This three-dimensional structure results in a cell size of 
with a minimum feature size 
and the large capacitance ratio of storage to bit-line which is about 4 times that of a typical commercial 64-kbit RAM cell. The soft-error-immunity cell structure is also taken into account. Static device characteristics of the planar MOSFET transfer gate built on an epitaxial layer and the buried storage capacitance are investigated relating to doses of boron implantation to the channel and substrate. Dynamic WRITE/READ operations are performed with an experimental 4 × 10 cell array implemented with 
-µm features. The technology offers the possibilities of a high density dynamic MOS RAM with a single poly-Si process.
with a minimum feature size and the large capacitance ratio of storage to bit-line which is about 4 times that of a typical commercial 64-kbit RAM cell. The soft-error-immunity cell structure is also taken into account. Static device characteristics of the planar MOSFET transfer gate built on an epitaxial layer and the buried storage capacitance are investigated relating to doses of boron implantation to the channel and substrate. Dynamic WRITE/READ operations are performed with an experimental 4 × 10 cell array implemented with -µm features. The technology offers the possibilities of a high density dynamic MOS RAM with a single poly-Si process.Keywords :
Boron; Capacitance; DRAM chips; Epitaxial layers; Fabrication; Impurities; MOS capacitors; MOSFET circuits; Read-write memory; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20507
Filename :
1481659
Link To Document :
