Title :
High-power and high-speed characteristics of modified heterostructure IRED´s
Author :
Ono, Yuuichi ; Mori, Mitsuhiro ; Ito, Kazuhiro ; Kurata, Kazuhiro
Author_Institution :
Hitachi Limited, Kokubunji, Tokyo, Japan
fDate :
10/1/1981 12:00:00 AM
Abstract :
A modified heterostucture Ga1-xAlxAs near infrared emitting diode is described with single (SH) and double heterostructures (DH) adopted for carrier confinement. The active region is arranged in a layer for best crystal quality as shown by photoluminescence measurement. The maximum 3-dB bandwidth is 175 MHz and optical output power reaches 7 mW in a surface emitting diode. The experimental results are compared with optical characteristics for SH and DH IRED´s.
Keywords :
Bandwidth; DH-HEMTs; Diodes; Epitaxial layers; High speed optical techniques; Optical pulses; Photoluminescence; Power generation; Stimulated emission; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20508
