• DocumentCode
    1075473
  • Title

    I-1 performance comparison of MOSLSI built using bulk and SOS technology

  • Author

    Sun, E.

  • Volume
    28
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1207
  • Lastpage
    1208
  • Keywords
    Annealing; CMOS technology; Electron traps; Isolation technology; Large scale integration; MOS devices; Silicon devices; Solid lasers; Solid state circuits; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20514
  • Filename
    1481666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075473