BiCMOS variable gain transimpedance amplifier for automotive applications

Author

De Ridder, T. ; Ossieur, P. ; Yin, X. ; Baekelandt, B. ; Melange, C. ; Bauwelinck, J. ; Qiu, X.Z. ; Vandewege, J.

Author_Institution

Ghent Univ., Ghent

Volume

44

Issue

4

fYear

2008

Firstpage

287

Lastpage

288

Abstract

A new BiCMOS variable gain transimpedance amplifier with a large area integrated photodiode for automotive applications is presented. Through careful control of the input pole position and the frequency response of the core amplifier, the bandwidth of the transimpedance amplifier varies from 112 to 300 MHz when its gain changes from 14.2 kOmega to 400 Omega. The proposed circuit configuration maintains a high voltage across a common anode photodiode, and its bandwidth in highest gain varies from 121 to 102 MHz over a temperature range of -40 to +140degC. Simulation results in a 0.6 mum Si BiCMOS technology are given. The amplifier consumes 16 mW from a 3.3 V supply.

Keywords

BiCMOS integrated circuits; amplifiers; anodes; automotive electronics; electric impedance; frequency response; photodiodes; BiCMOS variable gain transimpedance amplifier; anode photodiode; automotive application; bandwidth 112 MHz to 300 MHz; circuit configuration; frequency response; pole position; power 16 mW; size 0.6 mum; temperature -40 C to 140 C; voltage 3.3 V; Bandwidth; BiCMOS integrated circuits; Gain; MOSFETs; Optical receivers; Temperature distribution; Temperature sensors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

4455412