Title :
Thermal stability of magnetic tunnel junctions with FeOx doped tunnel barrier
Author :
Kim, Sun Ja ; Kim, Sun Ja ; Im, D.H. ; Kim, Choong Ki ; Yoon, Chang Soo
Author_Institution :
Dept. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
fDate :
7/1/2004 12:00:00 AM
Abstract :
Magnetic tunnel junctions were fabricated with tunnel barriers that had a thin film of Fe(0-8 Å thick) inserted in the middle to study the effect of FeOx doping on the magneto-electron transport properties of the junction. Tunneling magnetoresistance (TMR) ratio of 24% was realized with the tunnel junction with a 2 Å-thick Fe interlayer, whereas the junction without doping did not exhibit the TMR effect. The FeOx doping also considerably improved the thermal stability of the junction, retaining the TMR ratio of 15% at 350°C.
Keywords :
doping profiles; magnetic multilayers; magnetic thin films; magnetic tunnelling; thermal stability; tunnelling magnetoresistance; 350 C; FeO; TMR ratio; barrier doping; magnetic tunnel junctions; magnetoelectron transport properties; thermal stability; thin film; tunnel barrier; tunneling magnetoresistance; Annealing; Doping; Iron; Magnetic properties; Magnetic tunneling; Plasma measurements; Plasma temperature; Thermal stability; Transistors; Tunneling magnetoresistance; Barrier doping; MTJ; magnetic tunnel junction; thermal stability;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2004.830443
