Title :
IIB-2 two-dimensional charge-sheet model for short-channel MOSFETs
Author :
Wilson, C.L. ; Blue, J.L.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Boundary conditions; Breakdown voltage; Doping profiles; Electrons; Electrostatics; Integral equations; Length measurement; MOSFETs; NIST; Shape;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20528
