Title :
IIB-6 computer simulation of electron transport in "Ballistic" diodes
fDate :
10/1/1981 12:00:00 AM
Keywords :
Boundary conditions; Computer simulation; Diodes; Electrons; Gallium arsenide; MESFETs; Semiconductor process modeling; Silicon; Steady-state; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20530
