DocumentCode :
1075647
Title :
Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents
Author :
Somos, Istvan L. ; Piccone, Dante E. ; Willinger, Lawrence J. ; Tobin, William H.
Author_Institution :
Gen. Electr. Co., Malvern, PA, USA
Volume :
31
Issue :
6
fYear :
1995
Firstpage :
1221
Lastpage :
1226
Abstract :
Solid-state switches are being designed for use on AC transmission lines for tighter control of power flow and increased use of transmission capacity in accordance with an advanced concept called “Flexible AC Transmission System” (FACTS). These necessitate using the largest available thyristors and GTOs that must perform under emergency fault conditions with assurance of long term reliability and life expectancy. This paper is concerned with reviewing concepts needed to predict on-state losses incurred at extreme variations of junction temperature and describing an empirical method being used for commercially available 100 mm thyristors
Keywords :
fault currents; flexible AC transmission systems; load flow; load regulation; losses; power semiconductor switches; power system control; thyristor applications; 100 mm; AC transmission lines; FACTS; Flexible AC Transmission System; GTO; emergency fault conditions; junction temperature; life expectancy; long term reliability; multicycle fault currents; on-state characteristic prediction; on-state losses prediction; power flow control; power semiconductors; solid-state switches; temperature rise prediction; thyristors; Control systems; Fault currents; Heating; Industry Applications Society; Isothermal processes; Plasma temperature; Temperature dependence; Testing; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/28.475691
Filename :
475691
Link To Document :
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