Title :
IIB-7 two-dimensional computer modeling of GaAs devices
Author :
Swierkowski, S.P. ; Jelsma, L.F.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Boundary conditions; Gallium arsenide; Laboratories; MESFETs; Numerical stability; Semiconductor process modeling; Space charge; Time factors; Transient response; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20532
