On-the use of IGBT-gated GTO-cascode switches in quasi-resonant converters

Author

Tak-Kei Chan ; Morcos, Medhat M.

Author_Institution

Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA

Volume

31

Issue

6

fYear

1995

Firstpage

1227

Lastpage

1233

Abstract

The gate turn-off (GTO) thyristor has the highest voltage and current rating among the semiconductor power switches used extensively today. This paper documents the use of an insulated gate bipolar transistor (IGBT) to improve switching performance of a GTO in a cascode switch. The IGBT-gated GTO-cascode switch features simple drive requirement, fast switching, robustness, and overcurrent protection. The cascode switch was applied in a quasi-resonant buck converter and simulated on a computer using PSPICE. Results indicate that IGBT-gated GTO-cascode switches are promising candidates for high-power and high-frequency applications

Keywords

DC-DC power convertors; SPICE; circuit analysis computing; insulated gate bipolar transistors; overcurrent protection; power semiconductor switches; protection; resonant power convertors; switching circuits; thyristor convertors; IGBT-gated GTO-cascode switches; PSPICE; computer simulation; fast switching; gate turn-off thyristor; high-frequency; high-power; insulated gate bipolar transistor; overcurrent protection; quasi-resonant buck converter; quasi-resonant converters; robustness; semiconductor power switches; turn-off characteristics; turn-on characteristics; Buck converters; Computational modeling; Computer simulation; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Robustness; SPICE; Thyristors; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.475692

Filename

475692