DocumentCode :
1075661
Title :
IIB-8 Large signal switching response of submicron Si and GaAs MESFET´s: Device vs circuit
Author :
Faricelli, J. ; Nulman, J. ; Krusius, P. ; Frey, Jesse
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1220
Lastpage :
1220
Keywords :
Circuit simulation; Delay; Gallium arsenide; Logic design; Logic devices; Logic gates; MESFET circuits; Signal design; Switching circuits; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20533
Filename :
1481685
Link To Document :
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