Title :
IIB-8 Large signal switching response of submicron Si and GaAs MESFET´s: Device vs circuit
Author :
Faricelli, J. ; Nulman, J. ; Krusius, P. ; Frey, Jesse
fDate :
10/1/1981 12:00:00 AM
Keywords :
Circuit simulation; Delay; Gallium arsenide; Logic design; Logic devices; Logic gates; MESFET circuits; Signal design; Switching circuits; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20533
