Title :
Rotation of the pinned direction in artificial antiferromagnetic tunnel junctions by field annealing
Author :
Jun, Kyung-In ; Lee, J.H. ; Shin, K.-H. ; Rhie, K. ; Lee, B.C.
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
7/1/2004 12:00:00 AM
Abstract :
The effect of field annealing on the magnetic tunnel junctions (MTJs) with an artificial antiferromagnetic layer is investigated. Samples, which were grown under the same condition, are annealed with low (200-Oe) and high (1-kOe) magnetic fields. The rotation of the pinned direction is observed for the sample annealed at high magnetic field without decrease of tunneling magnetoresistance by varying the applied field direction. This result provides a method to adjust the pinned direction of the MTJ, which may be critical in switching a magnetic RAM (MRAM) cell.
Keywords :
antiferromagnetic materials; magnetic annealing; magnetic fields; magnetic switching; tunnelling magnetoresistance; artificial antiferromagnetic layer; artificial antiferromagnetic tunnel junctions; field annealing; field direction; magnetic RAM cell; magnetic field; magnetic tunnel junctions; pinned direction; tunneling magnetoresistance; Amorphous magnetic materials; Annealing; Antiferromagnetic materials; Electrodes; Magnetic anisotropy; Magnetic fields; Magnetic separation; Magnetic tunneling; Perpendicular magnetic anisotropy; Tunneling magnetoresistance; AAF; Artificial anitferromagnetic; MTJ; TMR; field annealing; layer; magnetic tunnel junction; tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2004.829320
