Rotation of the pinned direction in artificial antiferromagnetic tunnel junctions by field annealing

Author

Jun, Kyung-In ; Lee, J.H. ; Shin, K.-H. ; Rhie, K. ; Lee, B.C.

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea

Volume

40

Issue

4

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

2299

Lastpage

2301

Abstract

The effect of field annealing on the magnetic tunnel junctions (MTJs) with an artificial antiferromagnetic layer is investigated. Samples, which were grown under the same condition, are annealed with low (200-Oe) and high (1-kOe) magnetic fields. The rotation of the pinned direction is observed for the sample annealed at high magnetic field without decrease of tunneling magnetoresistance by varying the applied field direction. This result provides a method to adjust the pinned direction of the MTJ, which may be critical in switching a magnetic RAM (MRAM) cell.

Keywords

antiferromagnetic materials; magnetic annealing; magnetic fields; magnetic switching; tunnelling magnetoresistance; artificial antiferromagnetic layer; artificial antiferromagnetic tunnel junctions; field annealing; field direction; magnetic RAM cell; magnetic field; magnetic tunnel junctions; pinned direction; tunneling magnetoresistance; Amorphous magnetic materials; Annealing; Antiferromagnetic materials; Electrodes; Magnetic anisotropy; Magnetic fields; Magnetic separation; Magnetic tunneling; Perpendicular magnetic anisotropy; Tunneling magnetoresistance; AAF; Artificial anitferromagnetic; MTJ; TMR; field annealing; layer; magnetic tunnel junction; tunneling magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.829320

Filename

1325484