Title :
IIIA-4 a comparison of temperature dependence of lasing characteristics of 1.3 µm InGaAsP and GaAs DH lasers
Author :
Dutta, N.K. ; Nelson, R.J.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Charge carrier lifetime; DH-HEMTs; Gallium arsenide; Optical materials; Radiative recombination; Spontaneous emission; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20537
