DocumentCode
1075768
Title
IIIB-3 a new self-aligned double source/drain ion implantation technique - enhanced polysilicon oxidation
Author
Hsia, Shih-Chang ; Fatemi, R. ; Teng, T.C. ; Sun, S.C. ; Skinner, C.
Volume
28
Issue
10
fYear
1981
fDate
10/1/1981 12:00:00 AM
Firstpage
1226
Lastpage
1227
Keywords
Etching; Insulation; Ion implantation; Oxidation; Plasma applications; Plasma immersion ion implantation; Plasma sources; Plasma temperature; Silicides; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20543
Filename
1481695
Link To Document