DocumentCode :
1075768
Title :
IIIB-3 a new self-aligned double source/drain ion implantation technique - enhanced polysilicon oxidation
Author :
Hsia, Shih-Chang ; Fatemi, R. ; Teng, T.C. ; Sun, S.C. ; Skinner, C.
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1226
Lastpage :
1227
Keywords :
Etching; Insulation; Ion implantation; Oxidation; Plasma applications; Plasma immersion ion implantation; Plasma sources; Plasma temperature; Silicides; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20543
Filename :
1481695
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1075768
