Title :
IIIB-2 a new buried-oxide field isolation for VLSI devices
Author :
Kurosawa, K. ; Shibata, Takuma ; Iizuka, Hideo
fDate :
10/1/1981 12:00:00 AM
Keywords :
Crystallization; Etching; Isolation technology; Oxidation; Plasma applications; Plasma immersion ion implantation; Plasma properties; Silicon; Surfaces; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20544
