Title :
IIIB-4 fabrication of Si-MOSFET using NTD silicon as the semi-insulating substrate
Author :
Ho, V.Q. ; Sugano, Tatsuya
fDate :
10/1/1981 12:00:00 AM
Keywords :
Annealing; Doping; Fabrication; Insulation; Molecular beam epitaxial growth; Plasma applications; Plasma immersion ion implantation; Plasma temperature; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20545
