Title :
AIGaN/GaN MIS-HEMTs with fT of 194 GHz at 16 K
Author :
Endoh, A. ; Watanabe, I. ; Yamashita, Y. ; Mimura, T. ; Matsui, T.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo
Abstract :
45 nm-gate AIGaN/GaN MIS-HEMTs on SiC substrates have been fabricated and their DC and RF characteristics measured at 300 and 16 K. A source-drain spacing Lsd of 1.5 mum was used to reduce parasitic resistances, which was 0.5 mum shorter than that in previous work. High cutoff frequency fT values of 156 GHz at 300 K and 194 GHz at 16 K were obtained. These fT values are about 10% higher than those of AIGaN/GaN MIS-HEMTs with an Lsd of 2 mum.
Keywords :
III-V semiconductors; MIS structures; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; AlGaN-GaN; DC characteristic; MIS-HEMT; RF characteristics; frequency 194 GHz; reduced parasitic resistances; size 1.5 mum; source-drain spacing; temperature 16 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083659
