• DocumentCode
    1075841
  • Title

    AIGaN/GaN MIS-HEMTs with fT of 194 GHz at 16 K

  • Author

    Endoh, A. ; Watanabe, I. ; Yamashita, Y. ; Mimura, T. ; Matsui, T.

  • Author_Institution
    Nat. Inst. of Inf. & Commun. Technol., Tokyo
  • Volume
    44
  • Issue
    4
  • fYear
    2008
  • Firstpage
    319
  • Lastpage
    320
  • Abstract
    45 nm-gate AIGaN/GaN MIS-HEMTs on SiC substrates have been fabricated and their DC and RF characteristics measured at 300 and 16 K. A source-drain spacing Lsd of 1.5 mum was used to reduce parasitic resistances, which was 0.5 mum shorter than that in previous work. High cutoff frequency fT values of 156 GHz at 300 K and 194 GHz at 16 K were obtained. These fT values are about 10% higher than those of AIGaN/GaN MIS-HEMTs with an Lsd of 2 mum.
  • Keywords
    III-V semiconductors; MIS structures; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; AlGaN-GaN; DC characteristic; MIS-HEMT; RF characteristics; frequency 194 GHz; reduced parasitic resistances; size 1.5 mum; source-drain spacing; temperature 16 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20083659
  • Filename
    4455433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075841