Title :
AIGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment
Author :
Takatani, K. ; Nozawa, T. ; Oka, T. ; Kawamura, H. ; Sakuno, K.
Author_Institution :
Sharp Corp., Nara
Abstract :
Proposed is a novel AIGaN/GaN field effect diode with relatively thick AlGaN barrier layer, named the Schottky-ohmic combined anode field effect diode (SOCFED) because of its distinguishing anode structure. To obtain a low turn-on voltage, a method of fluoride-based plasma exposure was used. The fabricated SOCFED has a turn-on voltage of 0 V and a breakdown voltage of over 200 V.
Keywords :
Schottky diodes; field effect devices; surface treatment; Schottky-ohmic combined anode field effect diode; fluoride-based plasma treatment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083428
