• DocumentCode
    1075853
  • Title

    AIGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment

  • Author

    Takatani, K. ; Nozawa, T. ; Oka, T. ; Kawamura, H. ; Sakuno, K.

  • Author_Institution
    Sharp Corp., Nara
  • Volume
    44
  • Issue
    4
  • fYear
    2008
  • Firstpage
    320
  • Lastpage
    321
  • Abstract
    Proposed is a novel AIGaN/GaN field effect diode with relatively thick AlGaN barrier layer, named the Schottky-ohmic combined anode field effect diode (SOCFED) because of its distinguishing anode structure. To obtain a low turn-on voltage, a method of fluoride-based plasma exposure was used. The fabricated SOCFED has a turn-on voltage of 0 V and a breakdown voltage of over 200 V.
  • Keywords
    Schottky diodes; field effect devices; surface treatment; Schottky-ohmic combined anode field effect diode; fluoride-based plasma treatment;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20083428
  • Filename
    4455434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1075853