A Delay Test Architecture for TSV With Resistive Open Defects in 3-D Stacked Memories

The limits of technology scaling for smaller chip size, higher performance, and lower power consumption are being reached. For this reason, the memory semiconductor industry is searching for new technology. 3-D stacked memory using through-silicon via (TSV) has been considered as a promising solution for overcoming this challenge. However, to guarantee quality and yield for mass production of 3-D stacked memories, effective test techniques for TSV are required. In this paper, a new test architecture for testing TSVs in 3-D stacked memories is proposed. By comparing voltage changes generated due to resistive open defects with a reference voltage applied externally, the test circuit estimates delay across the TSV. This allows the possibility of a delay test with low-frequency test equipment. Experimental results demonstrate that the proposed test architecture can be effective in the testing of TSV with resistive open defects, and have lower area overhead and lower peak current consumption.