Title :
IVA-6 characteristics of AuGeNi ohmic contacts to GaAs
Author :
Heiblum, M. ; Nathan, M.I. ; Chang, C.A.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Annealing; Conductivity; Contact resistance; Electrons; Gallium arsenide; Gold; Impurities; Ohmic contacts; Surface morphology; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20555
